This subject aims to introduce the student to the range of popular instrumentation used for analyzing structure and composition of modern semiconductor devices and materials.
Materials
Crystalline and amorphous materials; chemical structure; crystallographic parameters and nomenclature with particular attention to Si, Cu, Al, W. Chemistry and microstructure of polymers and ceramics and their link to physical properties (density/porosity, electrical conductivity, dielectric strength, dielectric constant). Polymers in photo-resists and in low-K dielectrics. Materials insemiconducting devices: silicon, polysilicon, silicon dioxide, silicon nitride, tantalum oxide, high K- dielectrics, low-K dielectrics, phosphorus-doped silicon dioxide (PSG),ternary oxides,metals (Cu, Al, W, Ti).
Characterisation Techniques
Structural and Compositional Analysis: Optical Microscopy; Electron Microscopy (Scanning Electron Microscope, Field EmissionScanning Electron Microscope, Transmission Electron Microscope);Scanning Probe Microscopies (AFM, C-AFM, STM)for surface quality/texture measurements and for conductivity measurements. CompositionalInformation: X-Ray Electron Spectroscopy for elemental analysis; X-RayPhotoelectron Spectroscopy and Auger Electron Spectroscopy for chemicalanalysis; Secondary Ion Mass Spectroscopy for depth profiling. X-Ray Diffractionfor determination of crystalline or amorphous nature of material and foridentifying crystal structure, Fourier Transform Infrared Spectroscopy for chemical analysis.
Characterisation Techniques for Thin Films
X-Ray Reflectivity (for thickness,density and surface roughness measurements); Spectroscopic Ellipsometry (forthickness measurement and determination of optical and electrical constants). Ellipsometric Porosimetry (EP) and Positron Annihilation Spectroscopy (PALS) for determination of porosity.
| Module Content & Assessment | |
|---|---|
| Assessment Breakdown | % |
| Other Assessment(s) | 40 |
| Formal Examination | 60 |